Single event multiple transient (SEMT) measurements in 65 nm bulk technology-Reference-Cited by-同舟云学术

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Single event multiple transient (SEMT) measurements in 65 nm bulk technology

Published:2016-09 Issue: Volume: Page:
ISSN:
Container-title:2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Evans Adrian,Glorieux Maximilien,Alexandrescu Dan,Polo Cesar Boatella,Ferlet-Cavrois Veronique

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8082474/8093090/08093192.pdf?arnumber=8093192

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits;Micromachines;2024-07-05

2. Addressing Single-Event-Multiple-Transient Faults in Asynchronous RH-Click Controllers;2023 36th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI);2023-08-28

3. Heavy-ion and pulsed laser induced single-event double transients in nanometer inverter chain;Radiation Effects and Defects in Solids;2022-12-22

4. META: A Layout Based Tool to Estimate the Vulnerability of Digital Circuits to Multiple Event Transient;2022 20th IEEE Interregional NEWCAS Conference (NEWCAS);2022-06-19

5. Layout-based Vulnerability Analysis of LEON3 Processor to Single Event Multiple Transients using Satisfiability Modulo Theories;2022 23rd International Symposium on Quality Electronic Design (ISQED);2022-04-06

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