Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)-Reference-Cited by-同舟云学术

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Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)

Published:2008-10 Issue: Volume: Page:
ISSN:
Container-title:2008 International Conference on Prognostics and Health Management
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Author:

Patil Nishad,Das Diganta,Goebel Kai,Pecht Michael

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4694772/4711413/04711417.pdf?arnumber=4711417

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