Thermal Stress Analysis Comparison in IGBT Power Modules between DC and Switching Power Cycling-Reference-Cited by-同舟云学术

Thermal Stress Analysis Comparison in IGBT Power Modules between DC and Switching Power Cycling

Published:2023-09 Issue:9 Volume:38 Page:11500-11506
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Khatir Zoubir¹^ORCID,Lallemand Richard¹,Ibrahim Ali¹,Ingrosso Damien¹

Affiliation:

1. SATIE, Gustave Eiffel University, Versailles, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10197478/10164175.pdf?arnumber=10164175

Reference20 articles.

1. Reliability of power cycling for igbt power semiconductor modules

2. Impact of load pulse duration on power cycling lifetime of chip interconnection solder joints

3. Effect of power cycling parameters on predicted IGBT lifetime

4. Model for power cycling lifetime of IGBT modules-various factors influencing lifetime;bayerer;Proc IEEE 5th Int Conf Integr Power Electron Syst,2008

5. Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)

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