Abstract
AbstractAn on-chip solution for health monitoring of semiconductor power switches subjected to thermo-mechanical metal fatigue degradation is proposed. The fatigue detection relies on the correlation between the progress of the main failure mechanism, which is critical to the functionality of the device, and a parallel degradation of a non-critical sensing structure using a different mechanism. Both mechanisms are driven by the same cyclic thermo-mechanical load. This study specifically develops a sensing structure for detecting power metallization aging through electrically detectable ratcheting behavior in the routing metal layer underneath. Experiments have been carried out on a dedicated test structure with electrical sensing of the health monitoring structure. Meanwhile, the main degradation progress was observed via scanning electron microscopy in regular intervals. Results show that the proposed approach will reliably work only for detecting degradation driven by repeated high overload events.
Funder
Österreichische Forschungsförderungsgesellschaft
Università degli Studi di Milano - Bicocca
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献