Technology Dependence of Stuck Bits and Single-Event Upsets in 110-, 72-, and 63-nm SDRAMs-Reference-Cited by-同舟云学术

Technology Dependence of Stuck Bits and Single-Event Upsets in 110-, 72-, and 63-nm SDRAMs

Published:2023-08 Issue:8 Volume:70 Page:1861-1869
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Söderström Daniel¹^ORCID,Luza Lucas Matana²^ORCID,de Mattos André Martins Pio²,Gil Thierry²^ORCID,Kettunen Heikki¹,Niskanen Kimmo¹^ORCID,Javanainen Arto¹^ORCID,Dilillo Luigi²^ORCID

Affiliation:

1. Department of Physics, Accelerator Laboratory, University of Jyvaskyla, Jyvaskyla, Finland

2. LIRMM, CNRS, University of Montpellier, Montpellier, France

Funder

European Union’s Horizon 2020 Research and Innovation Program through the Marie Sklodowska-Curie RADSAGA and RADNEXT Projects

European Space Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10221199/10184045.pdf?arnumber=10184045

Reference22 articles.

1. Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories

2. In-Situ TID Test of 4-Gbit DDR3 SDRAM Devices

3. Neutron-induced effects on a self-refresh DRAM;luza;Microelectron Rel,2022

4. Soft errors in commercial off-the-shelf static random access memories

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