In-Situ TID Test of 4-Gbit DDR3 SDRAM Devices-Reference-Cited by-同舟云学术

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In-Situ TID Test of 4-Gbit DDR3 SDRAM Devices

Published:2013-07 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE Radiation Effects Data Workshop (REDW)
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Author:

Herrmann Martin,Grurmann Kai,Gliem Fritz,Schmidt Hagen,Ferlet-Cavrois Veronique

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6657104/6658177/06658199.pdf?arnumber=6658199

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Technology Dependence of Stuck Bits and Single-Event Upsets in 110-, 72-, and 63-nm SDRAMs;IEEE Transactions on Nuclear Science;2023-08

2. Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects;IEEE Access;2023

3. Radiation Effects (Single Event Effects and Total Ionization Dose) on Commercial LP-DDR3 SDRAM for ESA JUICE Mission;2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2019-09

4. A novel 3D DRAM memory cube architecture for space applications;Proceedings of the 55th Annual Design Automation Conference;2018-06-24

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