Radiation Effects (Single Event Effects and Total Ionization Dose) on Commercial LP-DDR3 SDRAM for ESA JUICE Mission

Author:

Tanios B.1,Lochon F.1,Perrotin O.1,Fontana P.1,Forgerit B.1,Tilhac F.1,Guerre F.X.1,Poivey C.2

Affiliation:

1. Hirex Engineering, a company of Alter Technology, member of TUV NORD Group,Ramonville Saint-Agne,France,31520

2. European Space Research and Technology Centre (ESTEC), European Space Agency (ESA),Noordwijk,AZ,The Netherlands,2201

Funder

European Space Agency

Publisher

IEEE

Reference6 articles.

1. Heavy Ion sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM;grürmann;IEEE NSREC Data Workshop,0

2. In-Situ TID Test of 4-Gbit DDR3 SDRAM Devices

3. The proton irradiation facility at the Paul Scherrer institute;hadjas;Nucl Instr and Meth B,1996

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Compendium of SEE and TID Test Results for DDR4 SDRAM memories;2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS);2022-10-03

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