A 10 to 170 GHz distributed amplifier using 130-nm SiGe HBTs
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7822827/7829673/07829679.pdf?arnumber=7829679
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Loss-Compensated Cascaded Multistage Distributed Power Amplifier in 65nm CMOS Technology;IEEE Access;2024
2. A 12–162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
3. A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT Technology;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
4. A 10–110 GHz LNA with 19-25.5 dB Gain and 4.8-5.3 dB NF for Ultra-Wideband Applications in 90nm SiGe HBT Technology;2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2021-06-07
5. Preliminary design of a dual 22/31 GHz single-chip water vapour radiometer;Ground-based and Airborne Telescopes VIII;2020-12-13
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