A 12–162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination-Reference-Cited by-同舟云学术

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A 12–162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
language:
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Author:

Kim Justin J.¹,Lee Wonho²,Buckwalter James F.¹

Affiliation:

1. University of California Santa Barbara,Santa Barbara,CA

2. PRL PCR, Intel Labs,Hillsboro,OR

Funder

NSF

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310903.pdf?arnumber=10310903

Reference12 articles.

1. A 10 to 170 GHz distributed amplifier using 130-nm SiGe HBTs

2. A Trimmable Cascaded Distributed Amplifier With 1.6 THz Gain-Bandwidth Product

3. Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends

4. A Single-Stage Low-Noise SiGe HBT Distributed Amplifier with 13 dBm Output Power and 20 dB Gain in D-Band and over 170 GHz Bandwidth

5. A three-stage cascaded distributed amplifier with GBW exceeding 1.5THz

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