A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT Technology-Reference-Cited by-同舟云学术

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A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT Technology

Published:2021-12-05 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Kazan Oguz,Rebeiz Gabriel M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682475.pdf?arnumber=9682475

Reference8 articles.

1. A three-stage cascaded distributed amplifier with GBW exceeding 1.5THz

2. 170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

3. 250 GHz SiGe-BiCMOS Cascaded Single-Stage Distributed Amplifier

4. A 10 to 170 GHz distributed amplifier using 130-nm SiGe HBTs

5. A DC-to-108-GHz CMOS SOI Distributed Power Amplifier and Modulator Driver Leveraging Multi-Drive Complementary Stacked Cells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 12–162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

2. A Balanced Darlington Cell for a 3–230-GHz InP Distributed Amplifier;IEEE Transactions on Microwave Theory and Techniques;2023

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