A selective dry-etch technique for GaAs MESFET gate recessing-Reference-Cited by-同舟云学术

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A selective dry-etch technique for GaAs MESFET gate recessing

Published:1988-10 Issue:10 Volume:35 Page:1580-1584
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chang E.Y.,Van Hove J.M.,Pande K.P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/385/00007356.pdf?arnumber=7356

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications;Journal of Semiconductors;2023-10-01

2. Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer;Applied Physics Express;2015-01-20

3. Reduction of Dry Etch Damage to GaAs Using Pulse-Time Modulated Plasmas;Electrochemical and Solid-State Letters;2007

4. Fabrication of piezoelectric Al0.3Ga0.7As microstructures;Sensors and Actuators A: Physical;2004-09

5. Highly Selective GaAs/Al0.2Ga0.8As Wet Etch Process for the Gate Recess of Low-Voltage-Power Pseudomorphic High-Electron-Mobility Transistor;Japanese Journal of Applied Physics;2000-08-15

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