Development of through silicon via (TSV) interposer technology for large die (21×21mm) fine-pitch Cu/low-k FCBGA package-Reference-Cited by-同舟云学术

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Development of through silicon via (TSV) interposer technology for large die (21×21mm) fine-pitch Cu/low-k FCBGA package

Published:2009-05 Issue: Volume: Page:
ISSN:
Container-title:2009 59th Electronic Components and Technology Conference
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Author:

Zhang Xiaowu,Chai T.C.,Lau John H.,Selvanayagam C. S.,Biswas Kalyan,Shiguo Liu ,Pinjala D.,Tang G.Y.,Ong Y.Y.,Vempati S.R.,Wai Eva,Li H.Y.,Liao E.B.,Ranganathan N.,Kripesh V.,Jiangyan Sun ,Doricko John,Vath C. J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5066986/5073977/05074032.pdf?arnumber=5074032

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The HRDL Interposer Technology Using Metal/Polymer Hybrid Bonding and Its Characteristics;IEEE Transactions on Materials for Electron Devices;2024

2. Recent Advances and Trends in Chiplet Design and Heterogeneous Integration Packaging;Journal of Electronic Packaging;2023-06-23

3. Recent Advances and Trends in Multiple System and Heterogeneous Integration With TSV Interposers;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-01

4. Multiple System and Heterogeneous Integration with TSV-Interposers;Chiplet Design and Heterogeneous Integration Packaging;2023

5. X‐ray microscopy and automatic detection of defects in through silicon vias in three‐dimensional integrated circuits;Engineering Reports;2022-05-12

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