Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling-Reference-Cited by-同舟云学术

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Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Verreck D.¹,Arreghini A.¹,Schanovsky F.²,Rzepa G.²,Stanojevic Z.²,Mitterbauer F.²,Kernstock C.²,Baumgartner O.²,Karner M.²,Van den bosch G.¹,Rosmeulen M.¹

Affiliation:

1. imec,Leuven,Belgium,3001

2. Global TCAD Solutions GmbH.,Vienna,Austria,1010

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720506.pdf?arnumber=9720506

Reference10 articles.

1. Long term charge retention dynamics of SONOS cells

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1. GaN-Based Charge Trapping Memory With an AlN Interfacial Layer for Multi-State Operation;IEEE Electron Device Letters;2024-07

2. Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors;Science Advances;2024-06-07

3. Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories;IEEE Transactions on Electron Devices;2024-04

5. Concave and Convex Structures for Advanced 3-D NAND Flash Memory Technology;IEEE Transactions on Electron Devices;2024-04

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