Physics and Innovative Technologies in SiC Power Devices
Author:
Affiliation:
1. Kyoto University,Department of Electronic Science and Eng.,Kyoto,Japan,615-8510
Funder
JST
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720696.pdf?arnumber=9720696
Reference15 articles.
1. Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface
2. Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar
3. Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems
4. Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation
5. Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing
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1. 1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications;Solid-State Electronics;2024-01
2. Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2¯ 3〉 directions in 4H-SiC;Japanese Journal of Applied Physics;2024-01-01
3. Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions;Japanese Journal of Applied Physics;2023-12-01
4. Estimation of electronic stopping cross sections of 4H-SiC for 2–26 MeV Al random-ion implantations;Japanese Journal of Applied Physics;2023-09-01
5. Technologies for Superior Reliability in SiC Power Devices;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26
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