16kbit HfO<sub>2</sub>:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility-Reference-Cited by-同舟云学术

16kbit HfO₂:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Francois T.¹,Coignus J.¹,Makosiej A.²,Giraud B.²,Carabasse C.¹,Barbot J.¹,Martin S.¹,Castellani N.¹,Magis T.¹,Grampeix H.¹,Van Duijn S.¹,Mounet C.¹,Chiquet P.³,Schroeder U.⁴,Slesazeck S.⁴,Mikolajick T.⁴,Nowak E.¹,Bocquet M.³,Barrett N.⁵,Andrieu F.¹,Grenouillet L.¹

Affiliation:

1. CEA, LETI, Univ. Grenoble-Alpes,Grenoble,France

2. CEA, LIST, Univ. Grenoble-Alpes,Grenoble,France

3. Aix Marseille Univ, Université de Toulon, CNRS, IM2NP,Marseille,France

4. NaMLab gGmbH,Dresden,Germany

5. SPEC, CEA, CNRS, Univ. Paris-Saclay, CEA Saclay, Gif-sur-Yvette,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720640.pdf?arnumber=9720640

Reference7 articles.

1. Nonferroelectric contributions to the hysteresis cycles in manganite thin films: A comparative study of measurement techniques

2. Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

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