Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation-Reference-Cited by-同舟云学术

Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂ films: vacancy generation and lattice dislocation

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Zheng Yunzhe¹,Zheng Yonghui¹,Gao Zhaomeng²,Yuan Jun-Hui³,Cheng Yan¹,Zhong Qilan¹,Xin Tianjiao¹,Wang Yiwei¹,Liu Cheng¹,Huang Yaru¹,Huang Rong¹,Miao Xiangshui³,Xue Kan-Hao³,Lyu Hangbing²

Affiliation:

1. East China Normal University,Key Laboratory of Polar Materials and Devices (MOE),Department of Electronics,Shanghai,China,200241

2. Institute of Microelectronics, Chinese Academy of Sciences,Key Laboratory of Microelectronics Devices and Integrated Technology,Beijing,China,100029

3. School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan National Laboratory for Optoelectronics,Wuhan,China,430074

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720565.pdf?arnumber=9720565

Reference12 articles.

1. The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

2. Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films

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