Design-Technology Co-Optimizations (DTCO) for General-Purpose Computing In-Memory Based on 55nm NOR Flash Technology-Reference-Cited by-同舟云学术

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Design-Technology Co-Optimizations (DTCO) for General-Purpose Computing In-Memory Based on 55nm NOR Flash Technology

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Feng Yang¹,Chen Bing²,Liu Jing³,Sun Zhaohui¹,Hu Hongyang³,Zhang Junyu⁴,Zhan Xuepeng¹,Chen Jiezhi¹

Affiliation:

1. School of Information Science and Engineering, Shandong University,Qingdao,China

2. School of micro-nano electronics, Zhejiang University,Zhejiang,Hangzhou,China

3. Institute of Microelectronics of Chinese Academy of Sciences,Key Laboratory of Microelectronic Devices and Integrated Technology,Beijing,China

4. Neumem Co., Ltd,Hefei,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720625.pdf?arnumber=9720625

Reference14 articles.

1. Memory devices and applications for in-memory computing

2. Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation

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