NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides
Author:
Affiliation:
1. Institute of Electronics, National Yang Ming Chiao Tung University,Taiwan
2. Taiwan Semiconductor Research Institute
3. Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University,Taiwan
Funder
Ministry of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720645.pdf?arnumber=9720645
Reference13 articles.
1. Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors
2. Depolarization as Driving Force in Antiferroelectric Hafnia and Ferroelectric Wake-Up
3. Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2thin films
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