Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
Author:
Affiliation:
1. Lund University Division of Electromagnetics and Nanoelectronics,Department of Electrical and Information Technology,Lund,Sweden
Funder
European Research Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10268496/10268469/10268561.pdf?arnumber=10268561
Reference16 articles.
1. Novel ferroelectric FET based synapse for neuromorphic systems
2. Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2
3. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
4. Domain Switching Kinetics in Disordered Ferroelectric Thin Films
5. Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics
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