Improving Edge Dead Domain and Endurance in Scaled HfZrO<sub>x</sub> FeRAM-Reference-Cited by-同舟云学术

Improving Edge Dead Domain and Endurance in Scaled HfZrO_x FeRAM

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Lin Yu-De¹,Yeh Po-Chun¹,Tang Ying-Tsan²,Su Jian-Wei¹,Yang Hsin-Yun¹,Chen Yu-Hao³,Lin Chih-Pin³,Yeh Po-Shao¹,Chen Jui-Chin¹,Tzeng Pei-Jer¹,Lee Min-Hung⁴,Hou Tuo-Hung¹,Sheu Shyh-Shyuan¹,Lo Wei-Chung¹,Wu Chih-I¹

Affiliation:

1. Industrial Technology Research Institute,EOSL,Hsinchu,Taiwan

2. National Central University,Department of Electrical Engineering,Taoyuan,Taiwan

3. Institute of Electronics, National Yang Ming Chiao Tung University,Hsinchu,Taiwan

4. Institute of Electro-Optical Science and Technology, National Taiwan Normal University,Taipei,Taiwan

Funder

Ministry of Science and Technology of Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720692.pdf?arnumber=9720692

Reference10 articles.

1. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications;francois;IEDM Tech Dig,2019

2. Anti-ferroelectric HfxZrl-xO2 capacitors for high-density 3-D embedded-DRAM;chang;IEDM Tech Dig,2020

3. Electron Backscatter Diffraction in Materials Science

4. 3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

5. Interplay of Switching Characteristics, Cycling Endurance and Multilevel Retention of Ferroelectric Capacitor

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Space Exploration of FeRAM Bit Cell for DRAM Application;IEEE Transactions on Electron Devices;2024-09

2. Low Contact Resistance on Monolayer MoS₂ Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts;ACS Nano;2024-08-07

3. CMOS-compatible Hf_0.5Zr_0.5O₂-based ferroelectric memory crosspoints fabricated with damascene process;Nanotechnology;2024-07-29

4. High-Performance WS₂ MOSFETs with Bilayer WS₂ Contacts;ACS Omega;2024-07-10

5. Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects;ACS Nano;2024-06-25