3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx-Reference-Cited by-同舟云学术

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3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Lin Y. D.,Sheu S. S.,Hou T. H.,Lo W. C.,Lee M. H.,Chang M. F.,King Y. C.,Lin C. J.,Lee H. Y.,Tang Y. T.,Yeh P. C.,Yang H. Y.,Yeh P. S.,Wang C. Y.,Su J. W.,Li S. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993504.pdf?arnumber=8993504

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes;Science China Information Sciences;2024-07-15

2. Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects;ACS Nano;2024-06-25

3. Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM Applications;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O₂-Based Ferroelectric NVDRAM;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. Trade-off Between Thermal Budget and Thickness Scaling: A Bottleneck on Quest for BEOL Compatible Ultra-Thin Ferroelectric Films Sub-5nm;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

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