Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mathrm{T}0\mathrm{C}$ DRAM with High Density beyond 4F2 by Monolithic Stacking-Reference-Cited by-同舟云学术

Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mathrm{T}0\mathrm{C}$ DRAM with High Density beyond 4F2 by Monolithic Stacking

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Duan Xinlv¹,Huang Kailiang²,Feng Junxiao²,Niu Jiebin¹,Qin Haibo²,Yin Shihui²,Jiao Guangfan²,Leonelli Daniele²,Zhao Xiaoxuan²,Jing Weiliang²,Wang Zhengbo²,Chen Qian¹,Chuai Xichen¹,Lu Congyan¹,Wang Wenwu¹,Yang Guanhua¹,Geng Di¹,Li Ling¹,Liu Ming¹

Affiliation:

1. Institute of Microelectronics of the Chinese Academy of Sciences,Key Laboratory of Microelectronics Devices and Integrated Technology,Beijing,China

2. Huawei Technologies Co., LTD.

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720682.pdf?arnumber=9720682

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