A 2.2μm stacked back side illuminated voltage domain global shutter CMOS image sensor-Reference-Cited by-同舟云学术

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A 2.2μm stacked back side illuminated voltage domain global shutter CMOS image sensor

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Park Geunsook,Grant Lindsay A.,Hsuing Alan Chih-Wei,Mabuchi Keiji,Yao Jingming,Lin Zhiqiang,Venezia Vincent C.,Yu Tongtong,Yang Yu-Shen,Dai Tiejun

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993606.pdf?arnumber=8993606

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. [Invited Paper] A High SNR Global Shutter CMOS Image Sensor Technology for High Precision Absorption Imaging Applications;ITE Transactions on Media Technology and Applications;2024

2. A 2.2μm 2-Layer Stacked HDR Voltage Domain Global Shutter CMOS Image Sensor with Dual Conversion Gain and 1.2e- FPN;2023 International Electron Devices Meeting (IEDM);2023-12-09

3. A 0.5 MP, 3D-Stacked, Voltage-Domain Global Shutter Image Sensor with NIR QE Enhancement, Event Detection Modes, and 90 dB Dynamic Range;Sensors;2023-11-27

4. Sensor-level computer vision with pixel processor arrays for agile robots;Science Robotics;2022-06-29

5. [Paper] 4.0 μm Stacked Voltage Mode Global Shutter Pixels with Single Exposure High Dynamic Range and Phase Detection Auto Focus Capability;ITE Transactions on Media Technology and Applications;2022

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