A 0.5 MP, 3D-Stacked, Voltage-Domain Global Shutter Image Sensor with NIR QE Enhancement, Event Detection Modes, and 90 dB Dynamic Range

Author:

Xhakoni Adi1

Affiliation:

1. ams OSRAM, Borsbeeksebrug 36, 2600 Antwerp, Belgium

Abstract

We introduce a compact voltage-domain global shutter CMOS image sensor for a wide range of applications including consumer, IoT, and industrial applications. With 0.5 MP and 2.79 µm pixels packed in a die size of only 2.3 mm × 2.8 mm, the sensor achieves more than 92% quantum efficiency (QE) in the visible wavelength and more than 36% at near-infrared (940 nm) all while drawing a mere 20 mW at a 10-bit, 30-frame-per-second operational mode. In this article, we focus on the architecture of the sensor and the design challenges encountered to fit all the necessary circuitry in such a limited footprint. Moreover, we detail the new solutions we have developed to meet the demanding specifications of low-power operation and high dynamic range (HDR).

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference22 articles.

1. Overview of CMOS Global Shutter Pixels;Velichko;IEEE Trans. Electron Devices,2021

2. Meynants, G., and Walschap, T. (2018). 3d Camera System with Rolling-Shutter Image Sensor. (16/755,784), U.S. Patent.

3. Xhakoni, A., Fekri, A., Francis, P., Vancauwenbergh, K., and Van Esbroeck, K. (2021, January 20–23). A 40,000 fps global shutter image sensor with 26.7 ns 12-bit row readout time. Proceedings of the International Image Sensors Workshop (IISW), Online Event.

4. Mizuno, I., Tsutsui, M., Yokoyama, T., Hirata, T., Nishi, Y., Veinger, D., Birman, A., and Lahav, A. (2020). A High-Performance 2.5 μm Charge Domain Global Shutter Pixel and Near Infrared Enhancement with Light Pipe Technology. Sensors, 20.

5. Evolution of Image Sensor Architectures With Stacked Device Technologies;Oike;IEEE Trans. Electron Devices,2022

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