Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs
Author:
Affiliation:
1. Department of Electrical Engineering, University of Bristol, Bristol, U.K.
2. Department of Electrical Engineering, University of Warwick, Coventry, U.K.
Funder
UK EPSRC Supergen Energy Networks Hub
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Control and Systems Engineering
Link
http://xplorestaging.ieee.org/ielx7/8782706/9667159/09739865.pdf?arnumber=9739865
Reference37 articles.
1. Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs
2. Assist Gate Driver Circuit on Crosstalk Suppression for SiC MOSFET Bridge Configuration
3. Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs
4. An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation
5. Investigation of the NBTI induced mobility degradation for precise circuit aging simulation
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1. An Experimental Technique for Detecting False Turn-on of SiC MOSFETs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
2. High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs;IEEE Open Journal of Industry Applications;2024
3. Investigation on Performance for Silicon and GaAs Channel of Double-Gate MOSFETs;Lecture Notes in Electrical Engineering;2023-09-03
4. Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench and Asymmetrical Trench SiC MOSFETs;IEEE Open Journal of Power Electronics;2023
5. A Novel SiC MOSFET Crosstalk Clamp Circuit Based on BJT Common -Base and Common- Collector;2022 5th International Conference on Power and Energy Applications (ICPEA);2022-11-18
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