The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's-Reference-Cited by-同舟云学术

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The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

Published:1999-04 Issue:4 Volume:46 Page:747-753
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ference T.G.,Burnham J.S.,Clark W.F.,Hook T.B.,Mittl S.W.,Watson K.M.,Liang-Kai Kevin Han

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/16273/00753709.pdf?arnumber=753709

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation;IEEE Transactions on Device and Materials Reliability;2022-09

4. From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation;Hot Carrier Degradation in Semiconductor Devices;2014-10-04

5. Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers;IEEE Transactions on Semiconductor Manufacturing;2008-05

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