Analytical threshold voltage model for ultrathin SOI MOSFETs including short-channel and floating-body effects-Reference-Cited by-同舟云学术

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Analytical threshold voltage model for ultrathin SOI MOSFETs including short-channel and floating-body effects

Published:1999-04 Issue:4 Volume:46 Page:729-737
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Adan A.O.,Higashi K.,Fukushima Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/16273/00753707.pdf?arnumber=753707

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