Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor-Reference-Cited by-同舟云学术

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Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor

Published:2011-05 Issue:5 Volume:11 Page:1157-1161
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Chang Yuh-Hwa,Lu Yen-Sheng,Hong Yu-Liang,Gwo Shangjr,Yeh J. Andrew

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/5729984/05585685.pdf?arnumber=5585685

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion-Sensitive Field-Effect Transistor-Based Biosensors: The Sources of Gates and Their Sensitive Layers—A Review;IEEE Sensors Journal;2024-06-01

2. Probing the charge state of threading dislocations in indium nitride through advanced atomic force microscopy;Materials Characterization;2023-11

3. Nafion Modified Titanium Nitride pH Sensor for Future Biomedical Applications;Sensors;2023-01-07

4. Revealing the Charge State of Dislocations in Indium Nitride Through Advanced Atomic Force Microscopy;2023

5. Recent advances in ion‐sensitive field‐effect transistors for biosensing applications;Electrochemical Science Advances;2022-02-18

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