Author:
Anand Nitin,Sinha Anubhav,Roy Chandramauleshwar,Islam Aminul
Cited by
12 articles.
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1. Radiation Tolerant by Design 12-transistor Static Random Access Memory;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2024-06-30
2. Circuit-level design of radiation tolerant memory cell;AEU - International Journal of Electronics and Communications;2024-02
3. Power Aware 10T Static Random-Access Memory Design;2023 2nd International Conference on Vision Towards Emerging Trends in Communication and Networking Technologies (ViTECoN);2023-05-05
4. Design of High Noise Tolerant Single-Bit Line 8T SRAM Cell;2023 International Conference on Advances in Electronics, Communication, Computing and Intelligent Information Systems (ICAECIS);2023-04-19
5. Single Event Upset Mechanism in SRAM Latch and Its Circuit-Level prevention Technique;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26