Single Event Upset Mechanism in SRAM Latch and Its Circuit-Level prevention Technique
Author:
Affiliation:
1. Birla Institute of Technology, Mesra,Dept. of ECE,Ranchi,India,835215
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032910.pdf?arnumber=10032910
Reference30 articles.
1. Soft-Error-Aware Read-Decoupled SRAM With Multi-Node Recovery for Aerospace Applications
2. Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications
3. Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications
4. Design of Soft-Error-Aware SRAM With Multi-Node Upset Recovery for Aerospace Applications
5. Analysis of radiation-hardening techniques for 6T SRAMs with structured layouts
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