Development of Ultrahigh-Voltage SiC Devices-Reference-Cited by-同舟云学术

Development of Ultrahigh-Voltage SiC Devices

Published:2015-02 Issue:2 Volume:62 Page:396-404
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fukuda Kenji,Okamoto Dai,Okamoto Mitsuo,Deguchi Tadayoshi,Mizushima Tomonori,Takenaka Kensuke,Fujisawa Hiroyuki,Harada Shinsuke,Tanaka Yasunori,Yonezawa Yoshiyuki,Kato Tomohisa,Katakami Shuji,Arai Manabu,Takei Manabu,Matsunaga Shinichiro,Takao Kazuto,Shinohe Takashi,Izumi Toru,Hayashi Toshihiko,Ogata Syuuji,Asano Katsunori,Okumura Hajime,Kimoto Tsunenobu

Funder

Japan Society for the Promotion of Science through the First Program entitled Funding Program for World-Leading Innovative Research and Development on Science and Technology

Joint Research Project, Tsukuba Power Electronics Constellations, Tsukuba, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7015642/06912955.pdf?arnumber=6912955

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