The Influence of Oxygen High-Pressure Annealing on the Performance and Bias Instability of Amorphous Ge–In–Ga–O Thin-Film Transistors-Reference-Cited by-同舟云学术

The Influence of Oxygen High-Pressure Annealing on the Performance and Bias Instability of Amorphous Ge–In–Ga–O Thin-Film Transistors

Published:2014-12 Issue:12 Volume:61 Page:4132-4136
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ahn Byung Du,Kim Hyun-Suk,Rim You Seung,Park Jin-Seong,Kim Hyun Jae

Funder

National Research Foundation (NRF) of Korea through the Ministry of Education, Science and Technology of Korea (MEST)

MEST, NRF, through the Korean Government

Global Frontier Research and Development Program within the Center for Hybrid Interface Materials through the Ministry of Science, ICT and Future Planning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6965486/06930753.pdf?arnumber=6930753

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Facile routes to enhance doping efficiency using nanocomposite structures for high-mobility and stable PEALD-ITGO TFTs;Applied Surface Science;2024-08

2. Ultrahigh Bias Stability of ALD In₂O₃ FETs Enabled by High Temperature O₂ Annealing;2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2023-06-11

3. High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H₂ plasma and neutral oxygen beam irradiation treatment;Nanotechnology;2023-02-10

4. Microwave and furnace annealing in oxygen ambient for performance enhancement of p-type SnO thin-film transistors;Semiconductor Science and Technology;2021-11-17

5. Development of extremely low temperature processed oxide thin film transistors via atmospheric steam reforming treatment: Interface, surface, film curing;Journal of Alloys and Compounds;2018-05