Neural Network Based Threshold Voltage Model for 3D TLC NAND Flash
Author:
Affiliation:
1. School of Electronics and Information Engineering, Harbin Institute of Technology,Harbin,China
2. Information and Communication Company, State Grid Tianjin Electric Power Company,Tianjin,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10269800/10269827/10270298.pdf?arnumber=10270298
Reference15 articles.
1. Research on 3D TLC NAND flash reliability from the perspective of threshold voltage distribution
2. RealWear
3. Machine learning model for predicting threshold voltage by taper angle variation and word line position in 3D NAND flash memory
4. Holistic Optimization of Trap Distribution for Performance/Reliability in 3-D NAND Flash Using Machine Learning
5. Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash
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