Numerical Investigation of a New GeSn MIR Phototransistor based on IGZO TFT Platform
Author:
Affiliation:
1. University of Batna 2,Advanced Electronics Laboratory (LEA),Batna,Algeria
2. University of Larbi Ben M’hidi, Oum El Bouaghi,ISTA,Oum El Bouaghi,Algeria
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9975828/9975804/09975876.pdf?arnumber=9975876
Reference34 articles.
1. Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors
2. Atlas User’s manual;SILVACO TCAD,2012
3. Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region
4. Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects
5. Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
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