Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics-Reference-Cited by-同舟云学术

Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Published:2016-03-14 Issue:10 Volume:119 Page:103106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tran Huong¹,Du Wei¹,Ghetmiri Seyed A.¹,Mosleh Aboozar¹,Sun Greg²,Soref Richard A.²,Margetis Joe³,Tolle John³,Li Baohua⁴,Naseem Hameed A.¹,Yu Shui-Qing¹

Affiliation:

1. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

2. Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, USA

3. ASM, 3440 East University Drive, Phoenix, Arizona 85034, USA

4. Arktonics, LLC, 1339 South Pinnacle Drive, Fayetteville, Arkansas 72701, USA

Funder

National Science Foundation (NSF)

Air Force Office of Scientific Research (AFOSR)

Defense Advanced Research Projects Agency (DARPA)

Small Business Innovation Research (SBIR)

Air Force Research Laboratory (AFRL)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/119/10/1.4943652.pdf?itemId=/content/aip/journal/jap/119/10/10.1063/1.4943652&mimeType=pdf&containerItemId=content/aip/journal/jap

Reference31 articles.

1. Silicon-based optoelectronics

2. Hole Mobility Enhancement in Compressively Strained ${\rm Ge}_{0.93}{\rm Sn}_{0.07}$ pMOSFETs

3. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

4. Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

5. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

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