Digital Active Gate Driving System for Paralleled SiC MOSFETs with Closed-loop Current Balancing Control-Reference-Cited by-同舟云学术

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Digital Active Gate Driving System for Paralleled SiC MOSFETs with Closed-loop Current Balancing Control

Published:2022-10-09 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Du Liyang¹,Wei Yuqi¹,Du Xia¹,Stratta Andrea¹,Saadatizadeh Zahra¹,Mantooth H. Alan¹

Affiliation:

1. University of Arkansas,Department of Electrical Engineering,Fayetteville,AR.,USA

Funder

National Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9947299/9947300/09947707.pdf?arnumber=9947707

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography;Solid State Phenomena;2024-08-23

2. Current Balancing of Parallel High Current SiC Half Bridge Modules using Delay Based Active Gate Driving with Inter-Device Inductances;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. Research on Current Sharing Method for SiC MOSFETs in Parallel Based on Adjustable Gate Voltage Driver;2023 China Automation Congress (CAC);2023-11-17

4. Transient DC Bias Current Mitigation for an ANPC based Triple-Active-Bridge (TAB) Converter;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

5. Binary-weighted Modular Multi-level Digital Active Gate Driver;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

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