Research on Current Sharing Method for SiC MOSFETs in Parallel Based on Adjustable Gate Voltage Driver
Author:
Affiliation:
1. School of automation, Chongqing University of Posts and Telecommunications,Chongqing,China
2. School of electric engineering, Chongqing University of Technology,Chongqing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10450150/10449968/10451094.pdf?arnumber=10451094
Reference16 articles.
1. Circuit and control strategy optimization of solid-state power controller for all-electric system
2. Effects of the Device Parameters and Circuit Mismatches on the Static and Dynamic Behavior of Parallel Connections of Silicon Carbide MOSFETs
3. Influence of Device Parameter Variability on Current Sharing of Parallel-Connected SiC MOSFETs
4. Research on Current Imbalance in Paralleling SiC MOSFET Multi-chip Power Modules;Ma;Journal of Power Supply,2019
5. Electrical parasitics and thermal modeling for optimized layout design of high power SiC modules
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