SRAM cell design for stability methodology-Reference-Cited by-同舟云学术

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SRAM cell design for stability methodology

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Container-title:IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech).
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Author:

Wann C.,Wong R.,Frank D.J.,Mann R.,Shang-Bin Ko ,Croce P.,Lea D.,Hoyniak D.,Yoo-Mi Lee ,Toomey J.,Weybright M.,Sudijono J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10004/32122/01497065.pdf?arnumber=1497065

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine Learning for SRAM Stability Analysis;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

2. Performance Analysis of 6T SRAM cell and 8T SRAM cell techniques using 18nm FinFET Technology;2024 4th International Conference on Innovative Practices in Technology and Management (ICIPTM);2024-02-21

3. Bayesian Learning Automated SRAM Circuit Design for Power and Performance Optimization;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-12

4. Cryogenic CMOS for Quantum Processing: 5-nm FinFET-Based SRAM Arrays at 10 K;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-08

5. Performance evaluation of double gate tunnel FET based chain of inverters and 6-T SRAM cell;Engineering Research Express;2019-12-18

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