Design of TFET with Ferroelectric Gate Material for Low Power Applications-Reference-Cited by-同舟云学术

Design of TFET with Ferroelectric Gate Material for Low Power Applications

Published:2021-12-16 Issue: Volume: Page:
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Container-title:2021 First International Conference on Advances in Computing and Future Communication Technologies (ICACFCT)
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Author:

Kawale Rituraj¹,Pachouri Ankit¹,Singh Yogendra²,Agarwal Lucky¹

Affiliation:

1. VIT Chennai,School of Electronics Engineering,Chennai,India

2. Ministry of Earth Science,IMD,Shivaji Nagar,Pune

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9837294/9837114/09837374.pdf?arnumber=9837374

Reference20 articles.

1. Dielectric Properties and Characterisation of Titanium Dioxide Obtained by Different Chemistry Methods

2. Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation

3. Titanium Dioxide Nanomaterials

4. Ferroelectric HfZrOx Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved IDS;zhou;IEDM Tech Dig,2016

5. The Quantum Metal Ferroelectric Field-Effect Transistor

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1. Investigation of In0.7Ga0.3As/Ga0.5As0.5Sb-Based Heterojunction TFET with Ferroelectric Gate Dielectric for Performance and Reliability;Journal of Circuits, Systems and Computers;2023-12-22

2. A High Schottky Barrier iTFET with Control Gate for Low Power Application;2023-05-31

3. Comprehensive Analysis of DG-TFET with Ferro Electric Material;2023 7th International Conference on Computing Methodologies and Communication (ICCMC);2023-02-23

4. A Novel Metal Dielectric Metal Based GAA-Junction-Less TFET Structure for Low Loss SRAM Design;Silicon;2022-11-19