Design of TFET with Ferroelectric Gate Material for Low Power Applications
Author:
Affiliation:
1. VIT Chennai,School of Electronics Engineering,Chennai,India
2. Ministry of Earth Science,IMD,Shivaji Nagar,Pune
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9837294/9837114/09837374.pdf?arnumber=9837374
Reference20 articles.
1. Dielectric Properties and Characterisation of Titanium Dioxide Obtained by Different Chemistry Methods
2. Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
3. Titanium Dioxide Nanomaterials
4. Ferroelectric HfZrOx Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved IDS;zhou;IEDM Tech Dig,2016
5. The Quantum Metal Ferroelectric Field-Effect Transistor
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1. A High Schottky Barrier iTFET with Control Gate for Low Power Application;2023-05-31
2. Comprehensive Analysis of DG-TFET with Ferro Electric Material;2023 7th International Conference on Computing Methodologies and Communication (ICCMC);2023-02-23
3. A Novel Metal Dielectric Metal Based GAA-Junction-Less TFET Structure for Low Loss SRAM Design;Silicon;2022-11-19
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