A Novel Metal Dielectric Metal Based GAA-Junction-Less TFET Structure for Low Loss SRAM Design
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02218-0.pdf
Reference42 articles.
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4. Asra R, Shrivastava M, Murali KV (2011) A tunnel FET for Vdd scaling below 0.6 V with a CMOS-comparable performance. IEEE Trans Electron Devices 58(7):1855–1863
5. Gupta N, Kumar A (2021) Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design. Appl Phys A 127:76
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