Copper-to-Copper Direct Bonding Process Using Current-Induced Enhancement Method-Reference-Cited by-同舟云学术

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Copper-to-Copper Direct Bonding Process Using Current-Induced Enhancement Method

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
language:
Short-container-title:

Author:

Kwak Byungkwan¹,Lee Jinhyun¹,Yoon Sanghwa¹,Yoo Bongyoung¹

Affiliation:

1. Hanyang University,Department of Material Science and Chemical Engineering,Ansan,Republic of Korea

Funder

Ministry of Trade, Industry & Energy(MOTIE, Korea)

Samsung Electronics Co., Ltd

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195657.pdf?arnumber=10195657

Reference16 articles.

1. Visualizing the Electron Wind Force in the Elastic Regime

2. Synergy of elastic strain energy and electron wind force on thin film grain growth at room temperature

3. Electrodeposition of Cu in the PEI-PEG-Cl-SPS Additive System

4. Electrochemical Polishing of Cu Redistribution Layers for Fan-Out Wafer Level Packaging

5. In-Depth Parametric Study of Ar or N2 Plasma Activated Cu Surfaces for Cu-Cu Direct Bonding

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. State of the Art of Cu–Cu Hybrid Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03

2. Cu-Cu Hybrid Bonding;Flip Chip, Hybrid Bonding, Fan-In, and Fan-Out Technology;2024

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