Direct Bonding Using Low Temperature SiCN Dielectrics-Reference-Cited by-同舟云学术

Direct Bonding Using Low Temperature SiCN Dielectrics

Published:2022-05 Issue: Volume: Page:
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Container-title:2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
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Author:

Iacovo Serena¹,Nagano Fuya¹,Channam Venkat Sunil Kumar¹,Walsby Edward²,Crook Kath²,Buchanan Keith²,Jourdain Anne³,Vanstreels Kris³,Phommahaxay Alain¹,Beyne Eric³

Affiliation:

1. imec,APPM,Leuven,Belgium

2. KLA,SPTS,Milpitas,California

3. imec,3DSIP,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816456.pdf?arnumber=9816456

Reference14 articles.

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4. Gas evolution studies for structural characterization of hexamethyldisilazane- based a -Si : C : N : H films;you,1998

5. Impact of organic linking and terminal groups on the mechanical properties of self-assembly based low-k dielectrics

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