Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing-Reference-Cited by-同舟云学术

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Published:2023 Issue: Volume: Page:1-8
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Stein Shane R.¹,Khachariya Dolar²^ORCID,Mecouch Will²,Mita Seiji²,Reddy Pramod²^ORCID,Tweedie James¹,Sierakowski Kacper³^ORCID,Kamler Grzegorz³,Bockowski Michal³,Kohn Erhard⁴,Sitar Zlatko²,Collazo Ramón⁴^ORCID,Pavlidis Spyridon¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA

2. Adroit Materials, Inc, Cary, NC, USA

3. Institute of High-Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

4. Department of Material Science and Engineering, North Carolina State University, Raleigh, NC, USA

Funder

U.S. Department of Energy's Advanced Research Projects Agency-Energy (ARPA-E) through Power Nitride Doping Innovation Offers Devices Enabling SWITCHES (PNDIODES) Program

North Carolina State University Faculty Start-up Fund

National Science Foundation

Office of Naval Research Global’s Naval International Cooperative Opportunities in Science and Technology Program

Poland’s National Center for Research and Development

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/4358746/10355931.pdf?arnumber=10355931

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