Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enhancing TFT Stability-Reference-Cited by-同舟云学术

Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enhancing TFT Stability

Published:2023-12 Issue:12 Volume:70 Page:6347-6353
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Hae Lin¹^ORCID,Kim Yoon-Seo¹,Hwang Taewon¹,Kamimura Sunao²,Eizawa Aya²^ORCID,Teramoto Takashi²,Dussarrat Christian²,Ono Takashi³,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, Seongdong-gu, Seoul, Republic of Korea

2. Air Liquide Laboratories, Innovation Campus Tokyo, Yokosuka, Japan

3. Air Liquide Advanced Materials, Branchburg, NJ, USA

Funder

Air Liquide Company Ltd

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10287276.pdf?arnumber=10287276

Reference31 articles.

1. Developing Subthreshold-Swing Limit of PEALD In–Sn–Ga–O Transistor via Atomic-Scaled Sn Control

2. Review Article: Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development

3. Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

4. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

5. Review of Present Reliability Challenges in Amorphous In-Ga-Zn-O Thin Film Transistors

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