Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings
Author:
Affiliation:
1. School of Integrated Circuits, Peking University, Beijing, China
2. School of Physics, Peking University, Beijing, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10040993.pdf?arnumber=10040993
Reference17 articles.
1. Design space and origin of off-state leakage in GaN vertical power diodes
2. Fundamentals of Power Semiconductor Devices
3. Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
4. Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN
5. Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2
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1. 2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current;IEEE Transactions on Electron Devices;2024-06
2. Design of a lateral photoconductive semiconductor switch with a low resistivity region on semi-insulating GaN to enhance breakdown characteristics;Optics Communications;2024-03
3. Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices;IEEE Transactions on Electron Devices;2024
4. Step Graded Floating Island Embedded Drift Design Engineering for High-Performance Vertical Power Devices;IEEE Transactions on Electron Devices;2023-12
5. Different reverse leakage current transport mechanisms of planar Schottky barrier diodes(SBDs) on sapphire and GaN substrate;Results in Physics;2023-10
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