Correlated Oxide Selector for Cross-Point Embedded Non-Volatile Memory-Reference-Cited by-同舟云学术

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Correlated Oxide Selector for Cross-Point Embedded Non-Volatile Memory

Published:2024-01 Issue:1 Volume:71 Page:916-921
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Luo Yuan-Chun¹^ORCID,Khanna Abhishek²,Grisafe Benjamin²,Sun Jiaxin³,Dutta Sourav²,Noskin Lindsey E.³^ORCID,Adamo Carolina³^ORCID,Mei Antonio B.³,Ghosh Ram Krishna⁴^ORCID,Colletta Michael³^ORCID,Holtz M. E.³,Gambin Vincent⁵^ORCID,Kourkoutis Lena F.³,Yu Shimeng¹^ORCID,Schlom Darrell G.²,Datta Suman¹^ORCID

Affiliation:

1. Georgia Institute of Technology, Atlanta, GA, USA

2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA

3. Department of Electrical Engineering, Cornell University, Ithaca, NY, USA

4. Indraprashtha Institute of Information Technology, Bangalore, India

5. Northrop Grumman Aerospace Systems, Redondo Beach, CA, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10354010.pdf?arnumber=10354010

Reference34 articles.

1. Reflections on the memory wall

2. Evaluation of Non-Volatile Memory Based Last Level Cache Given Modern Use Case Behavior

3. Re-NUCA: A Practical NUCA Architecture for ReRAM Based Last-Level Caches

4. Emerging Memory Technologies: Recent Trends and Prospects

5. 13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the Spin Transition and Carrier Type in Rare‐Earth Cobaltates via Compositional Complexity;Advanced Materials;2024-08-23

2. Embedded Transformer Hetero-CiM: SRAM CiM for 4b Read/Write-MAC Self-attention and MLC ReRAM CiM for 6b Read-MAC Linear&FC Layers;2024 IEEE International Memory Workshop (IMW);2024-05-12

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