Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes-Reference-Cited by-同舟云学术

Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes

Published:2023-04 Issue:4 Volume:70 Page:1566-1573
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Ruibo¹^ORCID,Liu Hongxia¹,Yan Cong¹^ORCID,Du Feibo²^ORCID,Han Aoran²,Zhang Yuxin²,Huang Wei¹^ORCID,Xiang Qi¹^ORCID,Gao Tianzhi¹,Wei Hao¹,Liu Zhiwei²^ORCID

Affiliation:

1. Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an, China

2. Center for Advanced Semiconductor and Integrated Micro-System, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Natural Science Foundation of China

Major Fundamental Research Program of Shaanxi

Innovation Foundation of Radiation Application

Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Company Ltd.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10053633.pdf?arnumber=10053633

Reference29 articles.

1. Novel Silicon-Controlled Rectifier With Snapback-Free Performance for High-Voltage and Robust ESD Protection

2. A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology

3. A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-μm 5-V CMOS Process

4. NLDD/PHALO-Assisted Low-Trigger SCR for High-Voltage-Tolerant ESD Protection Without Using Extra Masks

5. High holding voltage SCRs with segmented layout for high‐robust ESD protection

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