Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems
Author:
Affiliation:
1. IMEP-LAHC, Université Grenoble Alpes, Grenoble, Minatec, France
2. CEA-LETI, Université Grenoble Alpes, Grenoble, Minatec, France
Funder
Labex MINOS of French Agence Nationale de la Recherche
European Research Council (ERC) Synergy QuCube
EU H2020 RIA Project SEQUENCE
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10194493/10154578.pdf?arnumber=10154578
Reference22 articles.
1. In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation
2. Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing
3. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction
4. Conduction mechanisms in bandtails at the SiSiO2 interface
5. Quantum Transport in Semiconductor Nanostructures
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1. Sensitivity analysis of TMD TFET based photo-sensor for visible light detection: A simulation study;Microelectronics Journal;2024-01
2. Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing;IEEE Transactions on Nanotechnology;2023
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