In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation-Reference-Cited by-同舟云学术

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In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Published:2021-09-01 Issue: Volume: Page:
ISSN:
Container-title:2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
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Author:

Han Hung-Chi,Jazaeri Farzan,D'Amico Antonio,Zhao Zhixing,Lehmann Steffen,Kretzschmar Claudia,Charbon Edoardo,Enz Christian

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9560664/9560170/09560181.pdf?arnumber=9560181

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain;ECS Journal of Solid State Science and Technology;2024-05-31

2. An Experimentally Verified Temperature Dependent Drain Current Fluctuation Model for Low Temperature Applications;IEEE Journal of the Electron Devices Society;2024

3. Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications;Solid-State Electronics;2023-11

4. Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems;IEEE Transactions on Electron Devices;2023-08

5. Effective Channel Mobility Extraction and Modeling of 10-nm Bulk CMOS FinFETs in Cryogenic Temperature Operation for Quantum Computing Applications;IEEE Transactions on Electron Devices;2023-04

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