Deep Ultraviolet C Phototransistors Using Aluminum-Doped Gallium Hafnium Oxide Channel Layer-Reference-Cited by-同舟云学术

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Deep Ultraviolet C Phototransistors Using Aluminum-Doped Gallium Hafnium Oxide Channel Layer

Published:2023-09 Issue:9 Volume:70 Page:4725-4729
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu Guo-Long¹,Lee Hsin-Ying²^ORCID,Lee Ching-Ting³^ORCID

Affiliation:

1. Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

2. Department of Photonics, National Cheng Kung University, Tainan, Taiwan

3. Department of Electrical Engineering, Department of Photonics, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

Funder

National Science and Technology Council of the Republic of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10227840/10192253.pdf?arnumber=10192253

Reference24 articles.

1. Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition

2. Tailoring the solar-blind photoresponse characteristics ofβ-Ga2O3epitaxial films through lattice mismatch and crystal orientation

3. Aluminum-doped zinc oxide nanorods and methyl alcohol gas sensor application

4. MBE-Grown $\beta$ -Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107

5. Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film;alema;Phys Status Solidi (a),2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertically Stacked Triple-Bands Metal-Semiconductor-Metal Structured-Whole Ultraviolet Photodetectors;IEEE Sensors Journal;2024-08-01

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